| PART |
Description |
Maker |
| DTD543XE DTD543XM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB523YM DTB523YE |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTB523YE DTB523YE10 DTB523YM |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD513ZE DTD513ZM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2DA2018 2DA2018-7 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| 2SA1735 |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) Small Flat Package
|
TY Semiconductor Co., Ltd
|
| EN7645 |
Bipolar Transistor, (-12V)15V, (-1A)1.4A, Low VCE(sat) Complementary Dual MCPH6
|
ON Semiconductor
|
| 2SB1115A |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXSH24N60A IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V，VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V，VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
