| PART |
Description |
Maker |
| 2SD1760 |
Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1424 |
Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
|
TY Semiconductor Co., Ltd
|
| DTD543XE1 |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB513ZM DTB513ZE |
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD743ZE DTD743ZM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743ZM DTB743ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTD723YM DTD723YE |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
| CMLT591E |
SMD Small Signal Transistor PNP Low VCE(SAT)
PNP Low VCE(Sat) 1.0 Amp transistor
|
CENTRAL[Central Semiconductor Corp]
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| TSB1184CPS TSB1184 TSB1184CP TSB1184CPQ TSB1184CPR |
Low Vce(sat) PNP Transistor 低Vce（sat）PNP晶体
|
Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
|
