| PART |
Description |
Maker |
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| EMC4DXV5T1G EMC3DXV5T1G EMC3DXV5T5G EMC2DXV5T1G |
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base-Collector Bias Resistor Transistors
|
ON Semiconductor
|
| UMC2NT106 UMC5NT1G UMC3NT2G UMC5NT2G UMC2NT1 UMC2N |
Dual Common Base−Collector Bias Resistor Transistors
|
ONSEMI[ON Semiconductor]
|
| EMC2DXV5T1 EMC2DXV5T5 EMC5DXV5T5 EMC5DXV5T1 |
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| NSTB1005DXV504 NSTB1005DXV5T1 NSTB1005DXV5T5 |
Dual Common Base-Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SC4527 E000955 |
TV TUNER, UHF OSCILLATOR APPLICATIONS (COMMON BASE)
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF OSCILLATOR, COVBERTER APPLICATIONS)(COMMON BASE)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1617 |
Collector-base voltage VCBO -55 V Emitter-base voltage VEBO -5 V
|
TY Semiconductor Co., Ltd
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 30-FT12NMA160SH-M669F08 |
Common collector neutral connection
|
Vincotech
|
