PART |
Description |
Maker |
K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4M64163PH-RG K4M64163PH K4M64163PH-RBF1L K4M64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S56163LC-RFR |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位)内
|
Elpida Memory, Inc. Integrated Circuit Solu...
|
K4S28163LD-RFR |
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164 |
DYNAMIC RAM 1M x 16Bit x 4 Banks (64-MBIT) SDRAM
|
ICSI[Integrated Circuit Solution Inc]
|