| PART |
Description |
Maker |
| UPB584B UPB584G |
2.5GHZ DIVIDE-BY-2 PRESCALER
From old datasheet system
PRESCALER,SOP,8PIN,PLASTIC
PRESCALER,FP,8PIN,CERAMIC
|
NEC[NEC]
NEC Electron Devices
|
| Q67120-C850 Q67120-C934 SAB88C166W-5M SAB88C166-5M |
16-Bit CMOS Single-Chip Microcontrollers with/without oscillator prescaler with 32 KByte Flash EPROM
High Speed CMOS Logic Quad 2-Input OR Gates 14-SOIC -55 to 125
|
SIEMENS AG
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2225UK D2225 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
