| PART |
Description |
Maker |
| TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| S-AV33A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S9018 SS9018 SS9018HBU |
NPN Epitaxial Silicon Transistor
AM/FM Amplifier Local Oscillator of FM/VHF Tuner
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
AM/FM Amplifier / Local Oscillator of FM/VHF Tuner
|
FAIRCHILD[Fairchild Semiconductor]
|
| BFR98 2N4427 |
VHF OSCILLATOR POWER AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BGY36 BGY35 BGY32 BGY33 |
VHF power amplifier modules
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SC2640 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| S-AV6 E002857 |
VHF MARINE FM RF POWER AMPLIFIER MODULE
From old datasheet system
|
Toshiba
|
