| PART |
Description |
Maker |
| ZXMN3F318DN8 |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Diodes
|
| SSRP105B1 9111 SSRP105B1RL SSRP105 |
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TISP1082 |
DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
|
POINN[Power Innovations Ltd]
|
| CA82C12-10CD CA82C12-10CP CA82C12-10CJ CA82C12-10I |
TRANSIL
I/O Port
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE I / O端口
|
Rubycon, Corp.
|
| APTGF50DH120T |
Asymmetrical Bridge - IGBT
Asymmetrical - Bridge NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| APTGF150DH120 |
200 A, 1200 V, N-CHANNEL IGBT
Asymmetrical Bridge - IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| FDMS9600S08 FDMS9600S FDMS9600S-08 |
30V Dual N-Channel PowerTrenchMOSFET
Dual N-Channel PowerTrench? MOSFET
Dual N-Channel PowerTrench㈢ MOSFET
Dual N-Channel PowerTrench庐 MOSFET
|
Fairchild Semiconductor
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APTGT100DH170G |
Asymmetrical Bridge
|
Microsemi
|
| APTM10DHM05G |
Asymmetrical Bridge
|
Microsemi
|
