PART |
Description |
Maker |
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
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Infineon Technologies AG
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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KTD921 |
Darlington Transistor TRIPLE DIFFUSED NPN TRANSISTOR (COLOR & B/W TV POWER SUPPLY, INDUSTRIAL USE POWER SUPPLY, GENERAL PURPOSE POWER AMPLIFIER DARLINGRON TRANSISTOR)
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
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STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
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AUK, Corp. AUK[AUK corp]
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SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS⑩ Power Transistor Cool MOS??Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
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INFINEON[Infineon Technologies AG]
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TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS High power NPN silicon transistor Silicon NPN switching transistor Silicon NPN transistor PNP power transistor Small signal NPN transistor Medium power NPN silicon transistor Dual npn-pnp complementary bipolar transistor Complementary power transistors NPN power transistors 模拟IC Analog IC 模拟IC
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RECOM Electronic GmbH Vishay Intertechnology, Inc.
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SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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INFINEON[Infineon Technologies AG]
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2SB1555B 2SB1555 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS 3-Pin, Ultra-Low-Power SC70/SOT µP Reset Circuits
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TOSHIBA
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UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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NEC Corp. NEC[NEC]
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MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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