PART |
Description |
Maker |
2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB POWER TRANSISTORS(4A/80V/30W) POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 4A条一(c)| TO - 220AB现有 POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
HUFA75542P3 HUFA75542S3S HUFA75542S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 75A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 75A条(丁)|63AB 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs 75 A, 80 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 75A 80V 0.014 Ohm N-Channel UltraFET Power MOSFETs
|
Intersil, Corp. Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
MJE802T MJE702T MJE703T MJE803T MJE801T MJE701T MJ |
POWER TRANSISTORS(4.0A /60-80V /40W) POWER TRANSISTORS(4.0A,60-80V,40W) POWER TRANSISTORS(4.0A60-80V40W)
|
MOSPEC[Mospec Semiconductor] ON Semiconductor
|
FQU24N08 FQD24N08 FQD24N08TF FQD24N08TM |
80V N-Channel QFET 80V N-Channel MOSFET 19.6 A, 80 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0852DPB RJK0852DPB-00-J5 RJK0852DPB-13 |
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SCR544P 2SCR544P09 |
Midium Power Transistors (80V / 2.5A)
|
Rohm
|
2SCR544D |
Midium Power Transistors (80V / 2.5A)
|
Rohm
|
2SB1238 |
Medium power transistor(-80V, -0.7A)
|
Rohm
|
|