| PART |
Description |
Maker |
| MK4116 MK4116P MK4116P-2 MK4116P-3 |
16384 X 1 BIT DYNAMIC RAM
16,384 X 1 BIT DYNAMIC RAM 16384 × 1位动态随机存储器
|
List of Unclassifed Manufacturers
ETC
Electronic Theatre Controls, Inc.
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| AK5368192WP-70 |
8,388,608 by 36 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| HM514260C HM514260CJ-6 HM514260CJ-6R HM514260CJ-7 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| HM514260CLJ-7 HM514260CTT-7 HM514260CLJ-6R HM51S42 |
262,144-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
| NTE21256 |
262,144-Bit Dynamic Random Access Memory (DRAM)
|
NTE[NTE Electronics]
|
| AK5361024W |
2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5321024N |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK59256AG AK59256AS |
262,144 Word by 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK491024 AK59256 AK594096 AK5916384 |
1,048,576 Word X 9 bit, CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| 51W16165 |
4,194,304-Word ′ 0-Bit Dynamic Random Access Memory
From old datasheet system
|
hitachi
|
