PART |
Description |
Maker |
AT27BV020-90JI AT27BV020-90JU AT27BV020-90TU AT27B |
2-megabit (256K x 8) Unregulated Battery-Voltage High-speed OTP EPROM
|
ATMEL Corporation
|
AT29C1024-70 AT29C1024-15 AT29C1024-12TC AT29C1024 |
8-Bit Shift Registers With 3-State Output Registers 16-SOIC -55 to 125 8-Bit Shift Registers With 3-State Output Registers 16-SSOP -55 to 125 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory 1兆位64K的16 5伏只有闪存的CMOS 1 Megabit 64K x 16 5-volt Only CMOS Flash Memory 64K X 16 FLASH 5V PROM, 70 ns, PQCC44
|
Atmel Corp. Atmel, Corp. Electronic Theatre Controls, Inc.
|
AT27BV800 |
8-megabit Unregulated Battery-Voltage High-speed OTP EPROM(8M位非稳压的Battery-Voltage技术高速一次可编程EPROM)
|
Atmel Corp.
|
AT27BV512-15TI AT27BV512-15JI AT27BV512-90RC AT27B |
512K 64K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel
|
AT49BV1024A |
(AT49LV1024A / AT49BV1024A) 1-megabit (64K x 16) 3-volt Only Flash Memory
|
ATMEL Corporation
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AT27BV040-15TC AT27BV040-15TI AT27BV040-15JI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-TSSOP -55 to 125 4 Megabit 512K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory IC SMT SRAM 128K X 8 70NS 5V SOP-32 SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AT27BV400-15TI AT27BV400 AT27BV400-12JC AT27BV400- |
High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 256K X 16 OTPROM, 120 ns, PDSO48 4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 256K X 16 OTPROM, 150 ns, PDSO48
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 35 ns, QCC28 64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C... Pyramid Semiconductor Corporation
|