| PART |
Description |
Maker |
| IRGSL14C40LPBF IRGS14C40LPBF IRGB14C40LPBF |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
|
IRF[International Rectifier]
|
| NGB8245N |
Gate?Emitter ESD Protection
|
Littelfuse
|
| QIC0610001 |
Dual Common Emitter IGBT Module 100A 600V Per Switch
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| IRGMIC50U 1950 |
600V COPACK Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
Ultra Fast Speed IGBT
|
IRF[International Rectifier]
|
| IHW40T60 IHW40T60-13 |
IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
|
Infineon Technologies A...
|
| IRGC49B120UB |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| IRGC14C40LD IRGC14C40LC IRGC14C40LB IRGC14C40LBPBF |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | CHIP
14 A, 370 V, N-CHANNEL IGBT
|
|
| BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管IGBT
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT(带逻辑电平保护的绝缘栅双极型晶体管（IGBT
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| IRG4PSH71UD |
99 A, 1200 V, N-CHANNEL IGBT, TO-274AA
INSULATED GATE BIPOLAR TRANSISTOR WITH
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| IRGP20B60PD |
INSULATED GATE BIPOLAR TRANSISTOR
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
600V Warp2 150kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
