PART |
Description |
Maker |
BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
PTFA043002E |
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 鈥?860 MHz
|
Infineon Technologies AG
|
AWB7225 |
860 MHz to 894 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
MAFRIN0495 |
Single Junction Surface Mount Gull Wing Circulator 860 MHz-872 MHz
|
Tyco Electronics
|
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
MAMUCT0021 |
CATV Amplifier Splitter Module 50 - 860 MHz
|
M/A-COM Technology Solutions, Inc.
|
MAMUCT0021TR MAMUCT0021SMB MAMUCT0021 |
CATV Amplifier Splitter Module 50 - 860 MHz
|
MACOM[Tyco Electronics]
|
SKY66423-11 |
860 to 930 MHz RF Front-End Module
|
Skyworks Solutions Inc.
|