| PART |
Description |
Maker |
| NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管（低噪沟道结型场效应管
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| 3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
| MGF1951A_1 MGF1951A MGF1951A1 |
Microwave Power MES FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
| NES1823P-30 |
30 W L-S BAND PUSH-PULL POWER GaAs MES FET
|
NEC[NEC]
|
| TL071M TL071I TL071C TL071B TL071_01 TL071A TL071A |
LOW NOISE SINGLE JFET OP-AMPS
LOW NOISE J-FET SINGLE OPERATIONAL AMPLIFIERS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
