| PART |
Description |
Maker |
| FQD2N80 FQU2N80 FQD2N80TF FQD2N80TM FQU2N80TU |
800V N-Channel MOSFET
TRANSISTOR|MOSFET|N-CHANNEL|800VV(BR)DSS|1.8AI(D)|TO-252AA
800V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQA7N80C |
800V N-Channel MOSFET 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
800V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STD1NB80- STD1NB80-1 6190 STD1NB80 |
N-CHANNEL 800V - 16 OHM - 1A - IPAK POWERMESH MOSFET
N-CHANNEL 800V - 16 OHM - 1A - DPAK/IPAK POWERMESH MOSFET
N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET
N - CHANNEL 800V - 16 - 1A - IPAK PowerMESH TM MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FQB6N80 FQI6N80 FQB6N80TM |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| STP5NK80 STP5NK80Z STP5NK80ZFP |
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET N沟道800V 1.9ohm - 4.3A TO-220/TO-220FP齐保护的SuperMESH⑩功率MOSFET
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STW13NK80Z 9631 |
N-CHANNEL 800V - 0.53W - 12A TO-247 Zener-Protected SuperMESHPower MOSFET N沟道800V 0.53W -2A47齐纳保护SuperMESH？功率MOSFET
N-CHANNEL 800V - 0.53W - 12A TO-247 Zener-Protected SuperMESH Power MOSFET
From old datasheet system
N-CHANNEL 800V 0.53 OHM 12A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的，26A，N沟道HEXFET功率MOSFET00V的，26A条，沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
