| PART |
Description |
Maker |
| SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
| IRF7603 |
30V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
|
International Rectifier
|
| IRLML5103 IRLML5103PBF IRLML5103TR |
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
|
IRF[International Rectifier]
|
| NTMS4705N |
Power MOSFET 30V, 12A, Single N Channel, SO8(30V, 12A锛????OSFET)
|
ON Semiconductor
|
| NTMFS4120N |
Power MOSFET 30V, 31A, Single N Channel, SO8 Flat Lead(30V, 31A锛????OSFET)
|
ON Semiconductor
|
| HUF76105DK8 FN4380 HUF76105DK8T |
5A/ 30V/ 0.050 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
From old datasheet system
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
Intersil Corporation
Intersil, Corp.
|
| IRF7706 IRF7706TR |
-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
Power MOSFET(Vdss=-30V)
|
IRF[International Rectifier]
|
| STS7C4F30L |
7 A, 30 V, 0.026 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET⑩ POWER MOSFET
P-CHANEL 30V - 0.027 OHM - 6A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.018 ohm - 7A SO-8 P-CHANNEL 30V - 0.070 ohm - 4A SO-8 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| RSS065N03 RSS065N03FU6TB RSS065N03TB |
6.5 A, 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
Switching (30V 6.5A)
Switching (30V, 6.5A)
|
ROHM[Rohm]
|
| STS7PF30L07 |
P-CHANNEL 30V - 0.16楼? - 7A - SO-8 STripFET垄芒 II Power MOSFET
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET?II Power MOSFET
|
STMicroelectronics
|
|
