PART |
Description |
Maker |
A43L8316V-7 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
|
MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
|
IS42S16128 IS42S16128-10T IS42S16128-12T IS42S1612 |
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
AT27C2048 AT27C2048-12 AT27C2048-12JC AT27C2048-12 |
2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PDIP40 12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDIP40 12-Bit Asynchronous Binary Counter 16-TSSOP -40 to 85 128K X 16 OTPROM, 70 ns, PDSO40 2-Megabit 128K x 16 OTP EPROM 128K X 16 OTPROM, 120 ns, PQCC44 Enhanced Product 12-Bit Asynchronous Binary Counter 16-TSSOP -55 to 125 12-Bit Asynchronous Binary Counter 16-VQFN -40 to 85 12-Bit Asynchronous Binary Counter 16-SSOP -40 to 85 12-Bit Asynchronous Binary Counter 16-TVSOP -40 to 85 12-Bit Asynchronous Binary Counter 16-PDIP -40 to 85 12-Bit Asynchronous Binary Counter 16-SOIC -40 to 85
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
CY62137CVSL-70BVI CY62137CV CY62137CV25 CY62137CV2 |
Very high speed: 55 ns and 70 ns (CY62137CV25 / CY62137CV30 / CY62137CV33) 2M (128K x 16) Static RAM 32-Bit Transparent D-Type Latch with 3-State Outputs 96-LFBGA -40 to 85 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 55 ns, PBGA48 2M (128K x 16) Static RAM 128K X 16 STANDARD SRAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
LTC1876 |
High Efficiency, 2-Phase, Synchr., Dual, Step-Down Sw. Contr. W/ Step-Up Reg.
|
Linear
|
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
K6R3024V1D-HI12 K6R3024V1D K6R3024V1D-HC09 K6R3024 |
From old datasheet system 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) 128K的24位高速CMOS静态RAM.3V的工作) 128K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AS7C31025A-10TJI AS7C31025A-10JI AS7C31025A-10TJC |
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32 Parallel-Load 8-Bit Shift Registers 16-TVSOP -40 to 85 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Alliance Semiconductor, Corp.
|
TC55V4376FF-83 |
128K Word x 36 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?36浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|