PART |
Description |
Maker |
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
CLY5 Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|