PART |
Description |
Maker |
17572 17572-G |
HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
|
Vicor, Corp. VICOR[Vicor Corporation]
|
17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
15987-8 15987 |
HTSNK C X-FLOW. .911 LOW FLOW. THREADED HTSNK, C X-FLOW. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
17485-6 17485 |
HTSNK B LONG .4H LOW FLOW, THREADED
|
VICOR[Vicor Corporation]
|
17443 17443-B |
HTSNK A LONG .9H LOW FLOW,THRU HOLE HTSNK甲长0.9 低流,通孔 HTSNK A LONG .9H LOW FLOWTHRU HOLE
|
Vicor, Corp. VICOR[Vicor Corporation]
|
IC61SF12836 IC61SF12832 IC61SF12832-7.5B IC61SF128 |
SYNCHRONOUS STATIC RAM, Flow Through 128K x 32 Flow Through SyncBurst SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through From old datasheet system 8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
IDT71V547S100PF IDT71V547S100PFI IDT71V547S80PF ID |
From old datasheet system 128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM
|
IDT[Integrated Device Technology]
|
LFD40 |
Low Flow Rate Waterflow Detectors
|
Systemsensor advanced ideas.
|