| PART |
Description |
Maker |
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| CC5401 |
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO
|
Continental Device India Limited
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| 2SD2655 2SD655 |
Silicon NPN Transistor
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
|
Hitachi Semiconductor
TOSHIBA[Toshiba Semiconductor]
Rohm
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| BDV65B BDV65A BDV65C |
Silicon NPN Power Transistors
Silicon NPN Darlington Power Transistor
|
Inchange Semiconductor Company Limited
|
| ZUMT617 ZUMT617TA ZUMT617-15 |
Transient Voltage Suppressor Diodes
Super323? SOT323 NPN SILICON POWER TRANSISTOR
NPN SILICON POWER (SWITCHING) TRANSISTOR
Super323? SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR
|
ZETEX PLC
Diodes Incorporated
http://
|
| BUB323ZT4G BUB323Z_05 BUB323Z BUB323ZG BUB323ZT4 B |
NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount 10 A, 350 V, NPN, Si, POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| 2N3716 2N3715 ON0040 |
Slllcon NPN Power Translstors
10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 VOLTS 150 WATTS
From old datasheet system
|
Motorola Inc
ON Semi
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
