PART |
Description |
Maker |
GA1L3N GA1L3N-T2 GA1L3N-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
GA1L4L GA1L4L-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
GN1L3N GN1L3N-T2 GN1L3N-T1 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
GA1F4Z GA1F4ZL65 GA1F4ZL64 GA1F4Z-T2 |
Hybrid transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 323
|
NEC[NEC] NEC Corp. NEC, Corp.
|
2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62 From old datasheet system Medium Power Transistor (-32A,-1A) Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd. Rohm CO.,LTD. ROHM[Rohm]
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
2SD2143 2SD1866 2SD2397 |
Medium Power Transistor(Motor, Relay drive) (600V, 2A) 中等功率晶体管(电机,继电器驱动器)600V2A号) Medium Power Transistor(Motor/ Relay drive) (6010V/ 2A) Medium Power Transistor(Motor, Relay drive) (60?0V, 2A) Medium Power Transistor(Motor, Relay drive) (6010V, 2A)
|
Rohm Co., Ltd.
|
STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics STMicroelectronics
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
AA1F4Z AA1F4Z-T/JD AA1F4Z-T/JM AA1F4Z/JM |
Hybrid transistor On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC[NEC] NEC Corp.
|