| PART |
Description |
Maker |
| GVT7C1367A |
(GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
|
Cypress Semiconductor
|
| GVT71256C36 |
(GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
|
Cypress Semiconductor
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
From old datasheet system
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| E28F004BVT80 E28F004BVB80 E28F004BVT60 E28F004BVT1 |
4-MBIT (256K X 16/ 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Dual-Slot, PCMCIA Analog Power Controller
Evaluation Kit for the MAX5943A/B/C/D/E
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO48
4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 256K X 16 FLASH 5V PROM, PDSO56
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| A67P9318E-4.2F A67P8336 A67P8336E A67P8336E-2.6 A6 |
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.05 5uA-Ir 3Vr DO35-GLASS 5K/AMMO
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
GIGABASE 350 CAT5E PATCH 5 FT, SNAGLESS, WHITE 12k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 512k × 1856 × 36 LVTTL，流水线ZeBL的SRAM
512K X 18, 256K X 36 LVTTL, Pipelined ZeBL SRAM 12k × 18256 × 36 LVTTL，流水线ZeBL的SRAM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| CY7C1354CV25-225AXI CY7C1354CV25-167AXI CY7C1356CV |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟TM架构
9-Mbit ( 256K x 36/512K x 18 ) Pipelined SRAM with NoBL-TM Architecture 9兆位56 × 36/512K × 18）流水线的SRAM的总线延迟，TM架构
|
Cypress Semiconductor Corp.
|
| CY7C1355C-100AXC CY7C1355C-100BGXC CY7C1355C-133AX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL??Architecture
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS88132BGD-150IV GS88118BD-200IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| 27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
