| PART |
Description |
Maker |
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| MB8518H |
UV Erasable 8192-Bit ROM
|
Fujitsu
|
| HN27C256AG-10 HN27C256AGSERIES |
32768-word x 8-bit UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
| M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| 24C02 24C01 |
CMOS I2C 2-WIRE BUS 1K/2K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 128/256 X 8 BIT EEPROM
|
List of Unclassifed Manufacturers
ETC
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| BR93L56RFV-W BR93L56RF-W BR93L56RFJ-W BR93L56RFVM- |
128 X 16 bIT Electrically Erasable Programmable ROM
|
Rohm
|
| TC58257AP |
(TC58257AP/AF) Erasable and Programmable ROM
|
Toshiba
|
| TC544000 |
CMOS UV Erasable and Electrically Programmable ROM
|
Toshiba
|
