| PART |
Description |
Maker |
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man...
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
| 0541043096 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
| 0545480570 0545480870 0545482070 0545481070 54548- |
0.5 FPC CONN ZIF HSG ASSY FOR SMT RA BTM CONT -LEAD FREE-
|
Molex Electronics Ltd.
|
| AT45DB2562NBSP AT45DB2562 |
256M bit, 2.7-Volt Only Dual-Interface Flash. This document is only available under NDA. Please cont
From old datasheet system
|
Atmel Corp
|
| APT50M60JVR |
Volts:500V RDS(ON)0.06Ohms ID(cont):63Amps|MOSFETs 电压00V电压的RDS（ON.06Ohms身份证（续）63安培| MOSFET
|
Yageo, Corp.
|
| AS1390A-BQFT AS1390B AS1390B-BSOT |
High Power Boost Cont rol ler and Buck Conver ter for LED Backl ight
|
ams AG
|
| APT5523BFLL APT5523SFLL |
Volts:550V RDS(ON)0.23Ohms ID(cont):24Amps|FREDFETs ( fast body diode) 电压50V的RDS（ON.23Ohms身份证（续）：二十四安培| FREDFETs（快速体二极管）
|
Microsemi, Corp.
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| HYB18L2561 HYE25L256160AC-7.5 HYE25L256160AF-7.5 H |
HEX DIE SET,.052/.068/.100/.21
RT ANG PCB CONT .40/1.295 BULK
BJAWBMSpecialty DRAMs Mobile-RAM BJAWBMSpecialty DRAM的移动RAM
|
http://
INFINEON[Infineon Technologies AG]
|
