| PART |
Description |
Maker |
| V826664G24S |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
http://
|
| V826632G24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V826516B04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| NT512D72S8PB0G |
184 pin Unbuffered DDR DIMM
|
ETC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM
128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HYMD512646CP8-H HYMD512646CP8J-D43 HYMD512646CP8J- |
184pin Unbuffered DDR SDRAM DIMMs
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| HYS72D64020GU HYS64D64020GU |
2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184脚、寄存型512MDDR-I SDRAM 模块)
|
SIEMENS AG
|
