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IS28F010 - 131072 x 8 CMOS Flash Memory

IS28F010_897999.PDF Datasheet

 
Part No. IS28F010
Description 131072 x 8 CMOS Flash Memory

File Size 1,056.81K  /  18 Page  

Maker

Integrated Silicon Solution



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(CHINA HK & SZ)
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Part: IS28F010
Maker: ISSI
Pack: DIP
Stock: Reserved
Unit price for :
    50: $1.03
  100: $0.98
1000: $0.93

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 Full text search : 131072 x 8 CMOS Flash Memory
 Product Description search : 131072 x 8 CMOS Flash Memory


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HN28F101 HN28F101P-20 HN28F101T-15 HN28F101R-12 HN 131072-word x 8-bit CMOS Flash Memory
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List of Unclassifed Manufacturers
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IS28F010 131072 x 8 CMOS Flash Memory
Integrated Silicon Solution
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CATALYST[Catalyst Semiconductor]
IS28F200BLV 131072 x 16 / 262144 x 8 SmartVoltage Boot Block Flash Memory
ISSI
AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM    2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
W39V040FA W39V040FAT W39V040FAP W39V040FAQ 3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
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Winbond Electronics
WINBOND[Winbond]
EN29LV640TT-90TIP EN29LV640TB-90TIP EN29LV640TB-70 64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 64兆位米8分x 16位)闪存引导扇区闪存,CMOS 3.0伏,
Eon Silicon Solution Inc.
Eon Silicon Solution, Inc.
AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
Advanced Micro Devices, Inc.
http://
AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).2伏的CMOS只引导扇区闪
Advanced Micro Devices, Inc.
W39V080A W39V080AP W39V080AQ W39V080AT W39V080ATZ 1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO32
1M 8 CMOS FLASH MEMORY WITH LPC INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PQCC32
Winbond Electronics Corp
Winbond Electronics, Corp.
 
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