PART |
Description |
Maker |
BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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29F800 MX29F800TMC-12 MX29F800BMC-90 MX29F800BTC-9 |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
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Macronix International Co., Ltd. http://
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KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
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SAMSUNG SEMICONDUCTOR CO. LTD.
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BS616LV8010 BS616LV8010FIP55 BS616LV8010FIP70 BS61 |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit LM5010A High Voltage 1A Step Down Switching Regulator; Package: TSSOP EXP PAD; No of Pins: 14 From old datasheet system Asynchronous 8M(512Kx16) bits Static RAM LM5010A High Voltage 1A Step Down Switching Regulator; Package: LLP; No of Pins: 10 非常低功电压CMOS SRAM的为512k × 16 Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16 FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes
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Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K) ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
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WINBOND[Winbond] Winbond Electronics
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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WE512K16-140G4CA WE512K16-140G4Q WE512K16-150G4C W |
512Kx16 CMOS EEPROM MODULE
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WEDC[White Electronic Designs Corporation]
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TMP91PW12F |
Low-Voltage/Low Power CMOS 16-Bit Micro-controller 16-Bit Microcontroller TLCS-900 Family
|
Toshiba
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TMP87C409BN TMP87C409BM 87C809 TMP87C809BN TMP87C8 |
(TMP87Cx09xx) CMOS 8-bit Microcontroller Low Voltage, Low Power, 16-/24-Bit, Dual Sigma Delta ADC; Package: EVALUATION BOARDS; No of Pins: -; Temperature Range: TBD
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Toshiba Semiconductor Toshiba Corporation
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P87C51SBBB P87C51UFBB |
80C51 8-bit microcontroller family 4K/128 OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz CMOS single-chip 8-bit microcontrollers
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Philips
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BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer Very Low Power/Voltage CMOS SRAM 1M X 8 bit
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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