| PART |
Description |
Maker |
| FGB20N6S2 FGH20N6S2 FGP20N6S2 FGB20N6S2T |
28 A, 600 V, N-CHANNEL IGBT, TO-263AB TO-263AB, 3 PIN
600V/ SMPS II Series N-Channel IGBT
600V, SMPS II Series N-Channel IGBT, TO-263/D2PAK Package
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG40N60A4 FN4782 |
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4 |
CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGTP3N60A4D HGT1S3N60A4DS FN4818 |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| HGTP7N60A4 HGT1S7N60A4S9A HGT1S7N60A4S9A_04 HGTG7N |
600V, SMPS Series N-Channel IGBT
600V,SMPS Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG20N60A4 HGTP20N60A4 |
600V, SMPS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG7N60A4D05 HGTP7N60A4D HGT1S7N60A4DS HGTG7N60A4 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG20N60A4D09 |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor
|
| HGTG30N60A4 |
600V, SMPS Series N-Channel IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-247
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| UGP7N60 |
600V SMPS N-CHANNEL IGBT
|
UNISONIC TECHNOLOGIES
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
