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IRG4PH30 - INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条) 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

IRG4PH30_942663.PDF Datasheet

 
Part No. IRG4PH30 IRG4PH30K
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条)
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package

File Size 158.36K  /  8 Page  

Maker


International Rectifier, Corp.



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Part: IRG4PH30K
Maker: IR
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $2.02
  100: $1.92
1000: $1.82

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