| PART |
Description |
Maker |
| GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http://
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 5JL2CZ47 |
HIGH EFFICIENCY DIODE STACE (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| 5DL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
|
TOSHIBA
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| KSC5302DI |
High Voltage & High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| BC818F |
NPN Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
| MG200Q1ZS11 E002173 |
IND PROX M18 SCR NC 5MM SS
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ20107 2SJ201 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
| 2SK152909 |
High-Power Amplifier Application
|
Toshiba Semiconductor
|
