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SLD323XT - High Power Density 1 W Laser Diode From old datasheet system

SLD323XT_944037.PDF Datasheet


 Full text search : High Power Density 1 W Laser Diode From old datasheet system


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ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10    3.3V In-System Programmable High Density SuperFAST?PLD
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3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
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ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 2.5V In-System Programmable SuperFAST?High Density PLD
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Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
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OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 PT 3C 3#20 SKT RECP
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From old datasheet system
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OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
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IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4
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SMA5J30 SMA5J30A SMA5J33 SMA5J33A SMA5J36 SMA5J36A High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
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From old datasheet system
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OKI electronic components
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From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
CREE POWER
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LATTICE[Lattice Semiconductor]
LATTICE [Lattice Semiconductor]
Lattice Semiconductor Corporation
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