| PART |
Description |
Maker |
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MRF476 |
VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-220AB
|
MOTOROLA INC
|
| ASI10712 VHB10-12F ASI10650 TVU025 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
Mitsubishi Electric Corporation
|
| 2SC1324 |
MITSUBISHI RF POWER TRANSISTOR
NPN EPITAXIAL PLANAR TYPE(BROADBAND AMPLIFIERS FROM VHF TO UHF BAND)
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SC1971 |
silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC1972 SC1972 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
