| PART |
Description |
Maker |
| 1N5403K 1N5408K 1N5400K 1N5401K 1N5402K 1N5404K 1N |
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-SSOP -40 to 85 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TVSOP -40 to 85 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TSSOP -40 to 85 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TVSOP -40 to 85 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-204AC
20-Bit FET Bus Switch with -2 V Undershoot Protection 48-TSSOP -40 to 85 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC
Standard silicon rectifier diodes
|
SEMIKRON[Semikron International]
|
| PHN405 |
4 N-channel 60 mohm FET array enhancement mode MOS transistors
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AN4474 SG200 SG1002 MC16XSD200 |
Dual 16 mOhm High-Side Switch
|
Freescale Semiconductor, Inc
|
| MC06XSD200FK |
Dual 6.0 mOhm High Side Switch
|
Freescale Semiconductor, Inc
|
| MTD20P06HDL_D MTD20P06HDL MTD20P06 ON2490 |
TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
From old datasheet system
|
ON Semi
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| STH110N10F7-2 STH110N10F7-6 |
High avalanche ruggedness
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| SPB100N06S2-05 SPP100N06S2-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; NL; 5 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| MC33984 |
Dual Intelligent High-Current Self-Protected Silicon High-Side Switch (4.0 mOhm)(双智能大电流带自保护功能的硅高端开关（4mOhm
|
飞思卡尔半导体(中国)有限公司
|
| 35XS3400 |
Quad High Side Switch (Quad 35 mOhm)
|
Freescale Semiconductor, Inc
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
