| PART |
Description |
Maker |
| GB05SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT12-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SHD617052BN SHD617052AN SHD617052AP SHD617052BP SH |
HERMETIC SILICON CARBIDE RECTIFIER 5 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| BF421 BF423 Q62702-F496 Q62702-F532 |
PNP Silicon Transistors With High Reverse Voltage
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SC4709 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications
|
Sanyo Semicon Device
Toshiba Semiconductor
|
| C4D10120D-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SHDC626052P SHDC626052 SHDC626052D SHDC626052N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
