| PART |
Description |
Maker |
| BS62LV256SIP55 BS62LV256SC70 BS62LV256SIP70 BS62LV |
Very Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconductor
|
| LY62256SL LY62256SV LY62256RL LY62256 LY62256DL LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| UT62256BLS-35LL UT62256BLS-35L UT62256BLS-70L UT62 |
32K X 8 BIT LOW POWER (6T) CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| GM76V256CLT GM76V256C GM76V256CE GM76V256CL GM76V2 |
32K x8 bit 3.3V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| IDT71008S12Y IDT71008S20PH |
cmos static ram 32K*16-BIT 32K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Integrated Device Technology, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| CAT25C32PSE-1.8TE13 CAT25C32VSI-1.8TE13 CAT25C32Y1 |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS
|
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
BCD Semiconductor Manufacturing, Ltd.
|
| IS65C256 65C256 |
32K x 8 LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution Inc
ETC[ETC]
List of Unclassifed Manufacturers
|
| T15V256A03 |
32K X 8 LOW POWER CMOS STATIC RAM
|
Taiwan Memory Technology
|
