| PART |
Description |
Maker |
| CM75E3U-24H |
Chopper IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE
1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| APT25GT120BRDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
|
| FF800R12KE3 |
Technische Information / technical information
1200 A, 1200 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
eupec GmbH
|
| AD9735BBCRL AD9735BBCZ AD9735BBCZRL AD9735-EB AD97 |
12-Bit, 1200 MSPS D/A Converter; Package: CSPBGA (12x12x1.4mm); No of Pins: 160; Temperature Range: Industrial SERIAL INPUT LOADING, 12-BIT DAC, BGA160
10-/12-/14-Bit, 1200 MSPS DACS
|
Analog Devices, Inc.
|
| CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| APT2X31DQ120J APT2X30DQ120J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG |
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
