| PART |
Description |
Maker |
| TISP61511D08 |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP61089 |
DUAL FORWARD-CONDUCTING-P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
Power Innovations International, Inc.
|
| TISP61089HDM TISP61089HDMR-S |
DUAL FORWARD-CONDUCTING P-GATE THYRISTOR PROGRAMMABLE OVERVOLTAGE PROTECTOR
|
Bourns Electronic Solutions
|
| TISPPBL2P TISPPBL2D TISPPBL1P TISPPBL1D |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS 双远期导电的P -门晶闸管爱立信成分SLIC组件
|
Mospec Semiconductor, Corp.
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| TISP6NTP2A TISP6NTP2A08 |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
Bourns Electronic Solutions
|
| TISP61089ADR-S TISP61089SDR-S TISP61089ASDR-S |
SURGE PROT THYRIST 100V NEG SLIC TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
TISP Thyristor Overvoltage Protectors Dual P Gate Forward Conducting TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
PROTECTOR - OVER VOLTAGE TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
|
Bourns, Inc.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Q62705-K274 KPY33-RK |
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| 74AUP1G885GN 74AUP1G885GS 74AUP1G885DC |
Low-power dual function gate AUP/ULP/V SERIES, DUAL 3-INPUT XOR GATE, PDSO8
Low-power dual function gate 低功耗双功能
|
NXP Semiconductors N.V.
|
