PART |
Description |
Maker |
MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35 CANKPT02E16-26SX
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
MA2C188 MA188 |
Silicon epitaxial planar type 0.2 A, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
KDS112-15 |
SILICON EPITAXIAL TYPE DIODE
|
KEC(Korea Electronics)
|
SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
KDV142EL07 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|