| PART |
Description |
Maker |
| MRF9060MBR1 MRF9060MR1 |
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
Motorola, Inc.
|
| MRF21120 |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| MHS10N431K |
Micron Power Resistors
|
Allen
|
| JS28F00AP30BTFA JS28F00AP30EFA JS28F00AP30BFX JS28 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
MICRON
|
| N25Q00AA |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q512A13GSF40F N25Q512A13GSFA0F N25Q512A13G1240 |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q032A13ESF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| 251748-007 |
Intel Celeron Processor on 0.13 Micron Process in the 478-Pin Package
|
Intel Corporation
|
|
