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IRF610A -    Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF610A_1066951.PDF Datasheet

 
Part No. IRF610A
Description    Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 249.06K  /  7 Page  

Maker

Fairchild Semiconductor, Corp.



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IRF610A
Maker: 仙童
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.53
  100: $0.50
1000: $0.47

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 Full text search :    Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
 Product Description search :    Advanced Power MOSFET N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB


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