| PART |
Description |
Maker |
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| 2DI75M-120 |
POWER TRANSISTER MODULE
|
http://
FUJI[Fuji Electric]
|
| 2SD2478 |
MEDIUM POWER TRANSISTER
|
ROHM
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MTD4P06 MTD4P05 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor...
Freescale Semiconductor, Inc
|
| MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MTP8P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| ATC100B6R8BT500XT ATC100B0R3BT500XT ATC100B0R8BT50 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF373R1 MRF373SR1 |
RF POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc
|
| MRF6V14300HR3 MRF6V14300HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
