PART |
Description |
Maker |
EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- |
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏,10纳秒,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块) 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?) SSRAM Modules
|
Bourns, Inc. Electronic Theatre Controls, Inc.
|
GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM 150MHz 7.5ns 512K x 18 9Mb sync burst SRAM 166MHz 7ns 512K x 18 9Mb sync burst SRAM 200MHz 6.5ns 512K x 18 9Mb sync burst SRAM 225MHz 6ns 512K x 18 9Mb sync burst SRAM 250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V9 |
2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM
|
WEDC[White Electronic Designs Corporation]
|
BA7078AF1 BA7078AS BA7078AF BA7078AF-E2 |
Silicon Monolithic Integrated Circuit Sync.Seperator/Sync. Detector IC for Multi-Sync. Monitor
|
ROHM[Rohm]
|
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构) SSRAM Modules 的SSRAM模块 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器)) 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc. Molex, Inc.
|
GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS864018GT-250I GS864018GT-300I GS864018T-167 GS86 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8320V18GT-250 GS8320V18GT-250I GS8320V18T-133I G |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS832018T-133V GS832018T-133IV GS832018T-150IV GS8 |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
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