| PART |
Description |
Maker |
| WMS512K8BV-17CCE WMS512K8BV-17CIE WMS512K8BV-17FCE |
SRAM|512KX8|BICMOS-TTL|DIP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|FP|32PIN|CERAMIC
SRAM|512KX8|BICMOS-TTL|SOJ|32PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 32脚|陶瓷
SRAM|512KX8|BICMOS-TTL|FP|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电|计划生育| 36PIN |陶瓷
SRAM|512KX8|BICMOS-TTL|SOJ|36PIN|CERAMIC 静态存储器| 512KX8 |的BiCMOS - TTL电| SOJ | 36PIN |陶瓷
|
Electronic Theatre Controls, Inc.
AMIC Technology, Corp.
|
| WMF512K8-90CM5 WMF512K8-70CM5 WMF512K8-70CM5A WMF5 |
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
|
WEDC[White Electronic Designs Corporation]
|
| CY7C1049L-25VM |
25ns, 512Kx8 static RAM (SRAM)
|
Cypress
|
| WMF512K8-70CLM5 WMF512K8-70CLI5 WMF512K8-150CM5A W |
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
|
White Electronic Design...
|
| EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时0500ns
|
White Electronic Designs Corporation
|
| K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
|
Samsung semiconductor
|
| KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16）的CMOS掩模ROM分位512Kx8 / 256Kx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
128K X 8 STATIC RAM CMOS MONOLITHIC
CAPACITOR 150UF 200V ELECT TSHA
128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM，贴962-89598
CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM，贴962-89598
CAPACITOR 1200UF 200V ELECT TSHA
100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
|
White Electronic Designs
N.A.
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
