| PART |
Description |
Maker |
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| MA29 MA2C0290A MA2C0290B MA2C029WB MA2C029W MA2C02 |
Silicon epitaxial planar type variable resistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 1S2236 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV161 |
Silicon Epitaxial Planar Type Variable Capacitance Diode
|
Toshiba Semiconductor
|
| 1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS
|
TOSHIBA
|
| 3410GH142M400HPA1 3410DH102M350HPA1 3410EG212M250H |
Round Snap-In Aluminum Electrolytic Capaci-
|
Cornell Dubilier Electr...
|
| T499 T499_1 |
High Temperature ( 175) Tantalum SMT Capaci
|
KEMET[Kemet Corporation]
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
