| PART |
Description |
Maker |
| MC14467-1 MC14467P MC14467P-1 MC14467P1 |
Low-Power CMOS Ionization Smoke Detector IC 低功耗CMOS集成电路电离烟雾探测
|
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| MC145018 |
MC145018 Ionization Smoke Detector IC with Interconnect and Temporal Horn Driver
Low-Power CMOS Ionlzatlon Smoke Detector IC With Interconnect and Temporal HornDrlver
|
Motorola
|
| RE46C152 |
CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Tone Select
|
Microchip Technology
|
| RE46C122 |
CMOS Ionization Smoke Detector ASIC with Interconnect and Timer Mode Preliminary Product Specification
From old datasheet system
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| MX7501 MX7503 MX7502 MX7501JQ MX7501JN MX7503JN 15 |
8-Channel, Low-Power, Monolithic, CMOS Multiplexer
From old datasheet system
Low -Power Monolithic CMOS Analog Multiplexers
Low-Power, Monolithic, CMOS Analog Multiplexers
Low -Power / Monolithic / CMOS Analog Multiplexers
Low -Power, Monolithic, CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AD73311 |
Low Cost, Low Power CMOS General Purpose Analog Front End Processor(浣?????浣?????CMOS???妯℃????澶????
|
Analog Devices, Inc.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
From old datasheet system
55ns; 5V; 128K x 8 low power CMOS static RAM
35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
