| PART |
Description |
Maker |
| PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| HMC7885 HMC7885FH18 |
2 GHz to 6 GHz, 45 dBm Power Amplifier
|
Analog Devices
|
| TM059-064-09-39 |
5.9 - 6.4 GHz 39 dBm Power Module
|
Transcom, Inc.
|
| TM053-059-12-33 |
5.3 - 5.9 GHz 33 dBm Power Module
|
Transcom, Inc.
|
| CFH2162-P3 |
1.8 to 2.0 GHz 36 dBm Power GaAs FET
|
Mimix Broadband
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TA020-100-30-15 |
2 - 10 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
| TA085-110-30-38 |
8.5 - 11 GHz 38 dBm Amplifier
|
Transcom, Inc.
|
