| PART |
Description |
Maker |
| 2SC4672 |
Low Frequency Transistor (50V, 2A)
|
Rohm
|
| 2SC4617-AE3-R 2SC4617L-AE3-R 2SC4672-AB3-R 2SC4672 |
LOW FREQUENCY TRANSISTOR (50V,2A)
GENERAL PURPOSE TRANSISTOR
|
http://
UTC[Unisonic Technologies]
|
| DTA125TA DTA143XLA DTA143XAA DTA144GFA DTB114GF DT |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|资深大律师，71VAR
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 100mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 50MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 50mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
|
Air Cost Control
Delta Electronics, Inc.
Yageo, Corp.
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Intel, Corp.
Diodes, Inc.
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SC4155 2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC]
Isahaya Electronics Corporation
|
| 2SC3393 2SA1339 2SC3393R 2SC3393S 2SA1339T 2SC3393 |
High-Speed Switching Applications
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | SPAK
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SPAK
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SD1061 2SB825 2SB825Q |
50V/7A Switching Applications 50V/7A开关应
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| HS0-6254RH-Q HS1-6254RH HS-6254RH 5962F9764101VXC |
Radiation Hardened Ultra High Frequency
NPN Transistor Array(抗辐射甚高频NPN晶体管阵
1500PF 50V 0805
BJT
Radiation Hardened Ultra High Frequency NPN Transistor Array 辐射加固超高频NPN晶体管阵
|
Intersil Corporation
Intersil, Corp.
|
| 2SA1162 E000475 2SA1162GR 2SA1162-GRT5LM |
TRANS GP BJT PNP 50V 0.15A 3(2-3F1A)
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
