| PART |
Description |
Maker |
| 1SS302 |
Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
|
TY Semiconductor Co., Ltd
|
| TC56 TC562502ECT TC563002ECT TC563302ECT |
The TC56 is a low supply current (11 µA typ at VOUT =3V), low dropout CMOS linear regulator, with a 10V maximum input voltage range. CMOS construction eliminates wasted ground current typical of bipolar regulators for greater system e
150mA, 10V LDO with Shutdown
|
MICROCHIP[Microchip Technology]
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| 7 3X 6X 2X 4 5 4X 501104 501141 501177 501128 5011 |
Serially Interfaced, 8-Digit, LED Display Drivers
SCHLAUCHSCHELLE VERZINKT TYP 3X 5ST Inhalt pro Packung: 5 Stk.
NiCd/NiMH Battery Fast-Charge Controllers
SCHLAUCHSCHELLE VERZINKT TYP 6 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE VERZINKT TYP 2X 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE VERZINKT TYP 4 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE VERZINKT TYP 5 5ST Inhalt pro Packung: 5 Stk.
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
SCHLAUCHSCHELLE ROSTFREI TYP 000 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE ROSTFREI TYP 00 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE ROSTFREI TYP 0X 5ST Inhalt pro Packung: 5 Stk.
SCHLAUCHSCHELLE ROSTFREI TYP 2 5ST Inhalt pro Packung: 5 Stk.
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits SCHLAUCHSCHELLE ROSTFREI典型AST Inhalt亲Packung沙头角
|
TE Connectivity, Ltd.
|
| BXA15-48T05-12F BXA15-24T05-12F BXA15-48T05-15F BX |
Low voltage CMOS 16-bit bus transceiver (3-state) with 3.6V tolerant inputs and outputs
Low voltage CMOS 16-bit bus buffer (3-state inv.) with 3.6V tolerant inputs and outputs
Low voltage CMOS 16-bit bus buffer (3-state) with 3.6V tolerant inputs and outputs
Low voltage BICMOS 16 bit bus buffer with bus hold and power up 3-state 模拟IC
|
Advanced Interconnections, Corp.
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
| TMP91PW12F |
Low-Voltage/Low Power CMOS 16-Bit Micro-controller
16-Bit Microcontroller TLCS-900 Family
|
Toshiba
|
| SMCG5643A SMCJ5637 SMCG5653 SMCJ5660 SMCJ5661A SMC |
Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
Transient Voltage Suppressors 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
Zener Diode; Zener Voltage Typ, Vz:200V; Vz Test Current, Izt:65mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CMOS Quad Exclusive-NOR Gate 14-SOIC -55 to 125
CMOS Quad Exclusive-NOR Gate 14-PDIP -55 to 125
CMOS 4-Bit D-Type Registers with Clock and 3-State Outputs 16-CDIP -55 to 125
CMOS 4-Bit D-Type Registers with Clock and 3-State Outputs 16-SOIC -55 to 125
CMOS 4-Bit D-Type Registers with Clock and 3-State Outputs 16-PDIP -55 to 125
CMOS Triple 3-Input OR Gate 14-CDIP -55 to 125
CMOS Triple 3-Input OR Gate 14-TSSOP -55 to 125
CMOS 4-Bit D-Type Registers with Clock and 3-State Outputs 16-SO -55 to 125
CMOS Triple 3-Input OR Gate 14-SO -55 to 125
CMOS 4-Bit D-Type Registers with Clock and 3-State Outputs 16-TSSOP -55 to 125
CMOS Quad Exclusive-NOR Gate 14-CDIP -55 to 125
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit
Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns
Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
|
