| PART |
Description |
Maker |
| SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
| VI-B64-MU-BM VI-B61-CU-BM VI-B63-EU-BM VI-B63-MU-B |
LED IR 935NM PLASTIC SIDELOOK 电池充电电流源模
RES, 160 OHM 1/8W 5% 电池充电电流源模
Battery Charger Current Source Modules 电池充电电流源模
TRANS NPN LO SAT 60V 4.5A TO-92
TRANS PNP LO SAT 60V 5.5A SOT223
47K OHM 1/10W 5% SMT RESISTOR
TRANS PNP LO SAT 60V 3.5A TO-92
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| 2SK3338-01 |
TRANS PREBIASED PNP 200MW SOT323
N-CHANNEL SILICON POWER MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 2N5229 2N5230 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
|
New Jersey Semiconductor
|
| HUFA75337S3S HUFA75337G3 HUFA75337P3 |
TRANS PNP BIPOLAR 45V SOT323 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2N549 2N3262 |
Trans GP BJT NPN 80V 7A 3-Pin(2 Tab) TO-66 Sleeve
Trans GP BJT NPN 90V 25A 3-Pin TO-63
|
New Jersey Semiconductor
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| S9014 |
SILICON EPITAXIAL PLANAR TRANS ISTOR
|
SUNMATE electronic Co.,...
|
| S8050 |
SILICON EPITAXIAL PLANAR TRANS ISTOR
|
SUNMATE electronic Co.,...
|
