| PART |
Description |
Maker |
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045_03 MGFK35V4045 MGFK35V404503 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PH3135-25S |
Radar Pulsed Power Transistor,25W,2ms Pulse,10% Duty 3.1-3.5GHz 雷达脉冲功率晶体管，25瓦，2毫秒脉冲0％的.1 - 3.5GHz频段
|
Vishay Intertechnology, Inc.
Tyco Electronics
|
| EIA1414A-2P |
14.0-14.5GHz 2W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIA1314A-4P |
13.0-14.5GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1314A-2P |
13.0-14.5GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| ESLB-P245BA-X |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|
